(Hong Kong)
Product Summary
The BFP740E6327 is an NPN Silicon Germanium RF Transistor.
Parametrics
BFP740E6327 absolute maximum ratings: (1)Collector-emitter voltage:13V; (2)Collector-base voltage:13V; (3)Emitter-base voltage:1.2V; (4)Collector current:30mA; (5)Base current:3mA; (6)total power dissipation:160mW; (7)Junction temperature:150℃; (8)Ambient temperature:-65 to 150℃; (9)Storage temperature:-65 to 150℃.
Features
BFP740E6327 features: (1)High gain ultra low noise RF transistor; (2)Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more; (3)Ideal for CDMA and WLAN applications; (4)Outstanding noise figure F = 0.5 dB at 1.8 GHz; (5)Outstanding noise figure F = 0.85 dB at 6 GHz; (6)High maximum stable gain Gms = 27 dB at 1.8 GHz; (7)Gold metallization for extra high reliability; (8)150 GHz fT-Silicon Germanium technology; (9)Pb-free (RoHS compliant) package1); (10)Qualified according AEC Q101.
Diagrams
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BFP740FE6327 |
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