IRF7341

Power MOSFET, SOIC-8, 55 V, 3.8 A, 1.3W, IRF7341, International Rectifier

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Price:: US $0.40~1.20 / piece [Get Latest Price]

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	US $0.40~1.20

PartNumber:: IRF7341

Brand:: International Rectifier - IR | Pack: SOIC | D/C: 11+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
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Products Upload time: 2012-01-13

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Part Number:IRF7341
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Product Summary

The IRF7341 is a Power MOSFET. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF7341 is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF7341 absolute maximum ratings: (1)VDS, Drain- Source Voltage: 55 V; (2)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 4.7A; (3)ID @ TC = 70℃, Continuous Drain Current, VGS @ 10V: 3.8 A; (4)IDM, Pulsed Drain Current: 38 A; (5)PD @TC = 25℃, Power Dissipation: 2.0W; (6)PD @TC = 70℃, Power Dissipation: 1.3W; (7)Linear Derating Factor: 0.016 W/℃; (8)VGS, Gate-to-Source Voltage: ± 20 V; (9)VGSM, Gate-to-Source Voltage Single Pulse tp<10μs: 30 V; (10)EAS, Single Pulse Avalanche Energy: 72; (11)dv/dt, Peak Diode Recovery dv/dt: 5.0 V/ns; (12)TJ, TSTG, Junction and Storage Temperature Range: -55 to + 150℃.

Features

IRF7341 features: (1)Generation V Technology; (2)Ultra Low On-Resistance; (3)Dual N-Channel Mosfet; (4)Surface Mount; (5)Available in Tape & Reel; (6)Dynamic dv/dt Rating; (7)Fast Switching.