Product Summary
The STD5NM60-1 is an N-channel 500V-0.7Ω-7.5A DPAK/IPAK MDmesh power MOSFET. The STD5NM60-1 is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
Parametrics
STD5NM60-1 absolute maximum ratings: (1)Gate-source Voltage (VGS): ±30V; (2)ID: 8A; (3)IDM, Drain Current (pulsed): 32A; (4)PTOT, Total Dissipation at TC = 25℃: 100W; (5)Derating Factor: 0.8W℃; (6)dv/dt, Peak Diode Recovery voltage slope: 15V/ns; (7)Tstg, Storage Temperature: – 55 to 150℃; (8)Tj, Max. Operating Junction Temperature: – 55 to 150℃.
Features
STD5NM60-1 features: (1)typical RDS(on) = 0.9Ω; (2)high dv/dt and avalanche capabilities; (3)100% avalanche tested; (4)low input capacitance and gate charge; (5)low gate input resistance.
Diagrams

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(Hong Kong)









