Product Summary

The STN4NF03L Power Mosfet is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Parametrics

STN4NF03L absolute maximum ratings: (1)Drain-source Voltage (VGS =0): 30 V; (2)Drain-gate Voltage (RGS =20kΩ): 30 V; (3)Gate- source Voltage: ±16 V; (4)Drain Current (continuous) at TC = 25℃: 6.5 A; (5)Drain Current (continuous) at TC = 100℃: 4.5 A; (6)Drain Current (pulsed): 26 A; (7)Total Dissipation at TC = 25℃: 3.3 W; (8)Derating Factor: 0.026 W/℃; (9)Single Pulse Avalanche Energy: 200 mJ; (10)Storage Temperature:–55 to 175 ℃; (11)Operating Junction Temperature: –55 to 175 ℃.

Features

STN4NF03L features: (1)Typical RDS(on) = 0.039Ω; (2)Low threshold drive.

Diagrams

STN4NF03L internal schematic diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
STN4NF03L
STN4NF03L
STMicroelectronics
MOSFET N-Ch 30 Volt 6.5 Amp
Data Sheet
0-1: $0.68
1-10: $0.56
10-100: $0.49
100-250: $0.43
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
STN4NE03
STN4NE03
Other

Data Sheet
Negotiable 
STN4NE03L
STN4NE03L
Other

Data Sheet
Negotiable 
STN4NF03L
STN4NF03L
STMicroelectronics
MOSFET N-Ch 30 Volt 6.5 Amp
Data Sheet
0-1: $0.68
1-10: $0.56
10-100: $0.49
100-250: $0.43
STN4NF20L
STN4NF20L
STMicroelectronics
MOSFET N-Ch 200V 1.1 Ohm 1A LGC STripFET II
Data Sheet
0-1: $0.44
1-10: $0.32
10-100: $0.28
100-250: $0.23
STN4NF06L
STN4NF06L
STMicroelectronics
MOSFET N-CH 60V 4A STripFET
Data Sheet
0-2950: $0.30
2950-4000: $0.30
4000-5000: $0.28
5000-10000: $0.27