Product Summary
The STN4NF03L Power Mosfet is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Parametrics
STN4NF03L absolute maximum ratings: (1)Drain-source Voltage (VGS =0): 30 V; (2)Drain-gate Voltage (RGS =20kΩ): 30 V; (3)Gate- source Voltage: ±16 V; (4)Drain Current (continuous) at TC = 25℃: 6.5 A; (5)Drain Current (continuous) at TC = 100℃: 4.5 A; (6)Drain Current (pulsed): 26 A; (7)Total Dissipation at TC = 25℃: 3.3 W; (8)Derating Factor: 0.026 W/℃; (9)Single Pulse Avalanche Energy: 200 mJ; (10)Storage Temperature:–55 to 175 ℃; (11)Operating Junction Temperature: –55 to 175 ℃.
Features
STN4NF03L features: (1)Typical RDS(on) = 0.039Ω; (2)Low threshold drive.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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STN4NF03L |
STMicroelectronics |
MOSFET N-Ch 30 Volt 6.5 Amp |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
STN4NE03 |
Other |
Data Sheet |
Negotiable |
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STN4NE03L |
Other |
Data Sheet |
Negotiable |
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STN4NF03L |
STMicroelectronics |
MOSFET N-Ch 30 Volt 6.5 Amp |
Data Sheet |
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STN4NF06L |
STMicroelectronics |
MOSFET N-CH 60V 4A STripFET |
Data Sheet |
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STN4NF20L |
STMicroelectronics |
MOSFET N-Ch 200V 1.1 Ohm 1A LGC STripFET II |
Data Sheet |
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